您的位置:苏州大学软凝聚态物理及交叉研究中心>首页>学术报告

Current status and trends of RRAM technology

报告题目: Current status and trends of RRAM technology

 

报告时间:20161017日下午14:30

 

报告地点:物理科技楼101

 

报告摘要:

 

The common memory technologies used in the traditional memory hierarchy, are increasingly constrained by fundamental technology limits. The increasing leakage power for SRAM and refresh dynamic power for DRAM have posed challenges to circuit and architecture designers. Emerging memory technologies such as spin transfer torque RAM (STT-RAM), phase-change RAM (PCRAM), and resistive RAM (RRAM) are being explored as potential alternatives to existing memories in future computing systems. Especially, due to the excellent compatibility with CMOS process and ease of 3D integration, RRAM provides a promising potential for embedded and standalone applications. In this talk, current status of RRAM technology will be discussed, including switching mechanism, array architecture, 3D integration, target applications, challenges and future trends. A new era of convolutional computer architectures could be expected after the mature of emerging new NVM technologies.

  

报告人简介: 

 

吕杭炳,中国科学院微电子研究所研究员,主要致力于新型存储技术研究。目前主持的项目有国家重点研发计划青年科学家项目、自然基金委优秀青年科学基金、面上项目等;是NPG Asia MaterialAdvanced MaterialIEEE Electron Device LettersApplied Physics LettersVLSI SymposiumIEDM等杂志和会议的审稿人;Nature Communication, Advanced MaterialsIEEE Electron Device LettersIEDMVLSI等杂志和顶级会议上发表论文80余篇,SCI他引1000余次;获得美国专利授权2项,中国专利授权22项;获北京市科学技术奖二等奖2015年度中国科学院卢嘉锡青年人才奖;入选2013年度中国科学院青年促进会。